Prof. Radamson Henry H.

更新时间：2022-10-20 13:16

Henry Radamson is manager of Optoelectronics Innovation Center in Guangzhou. Henry Radamson is a Member of European Academy of Sciences. His research field is nanomaterials, and nanodevices towards integration of electronics and photonics. He has been project coordinator of national projects in photonics and electronics as well as four Semiconductor Research Corporation (SRC) with Texas Instruments (2005-2016).

Henry Radamson is the author or co-author of more than 300 publications and twelve bookchapters. He is author of two books “Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements, Elsevier 2014 & CMOS past, present, and future, Elsevier, 2018.

Henry Radamson is a member of Executive Committee in European Material Research Society (EMRS) where has also organized several symposiums/

Henry Radamson is in Editoral board of Springer-Nature.He has been also awarded several times for his educational efforts by Chinese Academy of Sciences and European academy.

Recent Developments in Si Photonic

The traditional approach for new devices in Si-based photonics have reached to a new era where new materials such as GeSnSi with direct bandgap property came in the scope of our research. The biggest difficulty in Si photonics is the lack of a reliable light source which could fulfil the need of a monolithic solution for photonic integrated circuit (PIC). On the other hand, we have to realize that the nanoelectronic industry is approaching the end of Moore’s law and we need to discover new innovative methods to further boost the carrier transport in the channel region. Therefore, the 3D transistors are being designed nowadays. Although many researchers are pleased with this approach but there are several missing points to follow these designs. For example, in order to manufacture ICs with multifunction operations, we need to integrate both the electronic and photonic components on a chip. This means that 3D devices are good but 3D chips should be our ultimate goal.

In this talk, a broad field from material synthesis to design of new detectors, lasers and transistors for PICs will be covered. It begins with Ge and GeSn growth and then continues to with III-V growth on Si in material part. Afterwards, new III-V lasers on Si and Ge detectors will be presented. The idea of transistor integration in PIC will be explored as well. The process challenges and difficulties are discussed and a future technology roadmap will be presented.

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